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Proceedings Paper

Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation)
Author(s): Yuh-Shiuan Liu; Tsung-Ting Kao; Yuanzeng Zhu; Young Jae Park; Karan Mehta; Shuo Wang; Shyh-Chiang Shen; Douglas Yoder; Fernando A. Ponce; Theeradetch Detchprohm; Russell D. Dupuis
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Paper Abstract

Vertical-cavity surface-emitting lasers (VCSELs) are known to have advantages of lower threshold current operation, circular and low-divergence output beam, and lower temperature sensitivity compared to edge-emitting laser diodes. In conventional VCSELs, the formation of a current aperture plays a vital role in the device characteristics. Low laser thresholds and single-transverse-mode operation would not be possible without a well-defined current aperture to confine carriers to generate photons between the two distributed Bragg reflectors. Since the introduction of the controlled oxidation process for the AlxGa1-xAs material system by Dallesasse and Holonyak in 1989, most VCSELs have employed oxidation for current aperture formation as well as optical confinement and this technique has become one of the most commonly used fabrication techniques for traditional III-V compound semiconductor infrared VCSELs. However, for III-N emitters operating at wavelengths in the ultraviolet to green wavelength range, the formation of Al-based native oxide layers has not proven feasible. As a result, various current-confinement techniques have been studied such as, selective-area growth of buried AlN, oxidizing AlInN, and selective activation of acceptors. In this work, we report an ion-implantation process which is effective for carrier confinement and defines a current aperture for our III-N ultraviolet microcavity light-emitting diodes (MCLEDs). The devices have peak emission wavelength of ~371.4 nm with the spectral linewidth of 5.1 nm at the highest pulsed current injection level of 15 kA/cm2. Further discussion on the material growth, material characterization, implantation parameters, as well as numerical simulation for structural design will be presented in the conference.

Paper Details

Date Published:
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010405; doi: 10.1117/12.2249958
Show Author Affiliations
Yuh-Shiuan Liu, Georgia Institute of Technology (United States)
Tsung-Ting Kao, Georgia Institute of Technology (United States)
Yuanzeng Zhu, Georgia Institute of Technology (United States)
Young Jae Park, Georgia Institute of Technology (United States)
Karan Mehta, Georgia Institute of Technology (United States)
Shuo Wang, Arizona State Univ. (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)
Douglas Yoder, Georgia Institute of Technology (United States)
Fernando A. Ponce, Arizona State Univ. (United States)
Theeradetch Detchprohm, Georgia Institute of Technology (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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