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Proceedings Paper

Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application
Author(s): S. Ganschow; Claudio Cavalloni; Peter Reiche; R. Uecker
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Paper Abstract

Single crystals of La3Ga5SiO14 were grown from the melt using the Czochralski technique. The mechanism of formation of most peculiar defects in La3Ga5SiO14 crystals was studied and the possibility of their suppression by an essential modification of the growth assembly discussed. The piezoelectric behavior of the grown crystals at high temperatures was investigated.

Paper Details

Date Published: 16 October 1995
PDF: 4 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224988
Show Author Affiliations
S. Ganschow, Institute of Crystal Growth (Germany)
Claudio Cavalloni, Kistler Instrumente AG Winterthur (Switzerland)
Peter Reiche, Institute of Crystal Growth (Germany)
R. Uecker, Institute of Crystal Growth (Germany)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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