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Proceedings Paper

Influence of droplet size on the growth of high-quality self-catalyzed GaAsP nanowires
Author(s): Yunyan Zhang; Ana M. Sanchez; Martin Aagesen; Yue Sun; Jiang Wu; Dongyoung Kim; Pamela Jurczak; Suguo Huo; Xiulai Xu; Huiyun Liu
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Paper Abstract

Nanowires (NWs) have better functionality and superior performance as compared with the traditional thin film counterparts. However, NW growth is highly complicated and the growth mechanism is far from clear, especially when it is grown by vapor-liquid-solid mode. In this work, the influences of droplet size on the growth of self-catalyzed ternary NWs were studied using GaAsP NWs. The size-induced Gibbs−Thomson (GT) effect is observed for the first time in the self-catalyzed growth mode, which can make the smaller catalytic droplets have lower effective supersaturations. Thus, the droplet size can significantly influence the uniformity and composition of NWs. By carefully control the droplet size, the growth of highly uniform NW arrays are demonstrated. These results provide useful information for understanding the mechanisms of self-catalyzed III−V NW nucleation and growth with the important ternary III−V material systems.

Paper Details

Date Published: 20 February 2017
PDF: 8 pages
Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 101140K (20 February 2017); doi: 10.1117/12.2249878
Show Author Affiliations
Yunyan Zhang, Univ. College London (United Kingdom)
Ana M. Sanchez, Univ. of Warwick (United Kingdom)
Martin Aagesen, Gasp Solar ApS (Denmark)
Yue Sun, Institute of Physics (China)
Jiang Wu, Univ. College London (United Kingdom)
Dongyoung Kim, Univ. College London (United Kingdom)
Pamela Jurczak, Univ. College London (United Kingdom)
Suguo Huo, Univ. College London (United Kingdom)
Xiulai Xu, Institute of Physics (China)
Huiyun Liu, Univ. College London (United Kingdom)


Published in SPIE Proceedings Vol. 10114:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV
Diana L. Huffaker; Holger Eisele, Editor(s)

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