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Proceedings Paper

Characterization of p-on-n HgCdTe diffusion photodiodes
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Paper Abstract

Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source into the n-type HgCdTe bulk single crystals. The temperature dependence of current- voltage and capacity-voltage characteristics, and the photodiode speed response, were analyzed. For 3 - 5-micrometer photodiodes with the electron concentration 3 multiplied by 1015 cm-3 in the base n-type layer, the typical resistance-area product at zero bias RoA was about 104 (Omega) cm2 at 77 K. For 8 - 12 micrometer photodiodes with the same electron concentrations in the base region, the RoA product values of 1 - 10 (Omega) cm2 were obtained. The typical photoresponse speeds were in the range of 50 ns and 20 - 30 ns for 3 - 5-micrometer and 8 - 12-micrometer photodiodes, respectively. The dark current of fabricated photodiodes was tunneling limited at 77 K, and generation-recombination and diffusion limited at higher temperatures.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224983
Show Author Affiliations
Vladimir V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
Jaroslaw Rutkowski, Institute of Technical Physics (Poland)
Antoni Rogalski, Institute of Technical Physics (Poland)
Fiodor F. Sizov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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