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Proceedings Paper

LWIR p+-n photodiodes fabricated with HgCdTe bulk material
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Paper Abstract

P+-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe bulk monocrystals. To improve the photodiode performance, a thickness of n-type base layer was limited. The photodiodes performance was determined from measurements of the current-voltage and spectral response characteristics. The generation-recombination current was found to be a dominant current around zero bias voltage at 77 K.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224982
Show Author Affiliations
Jaroslaw Rutkowski, Institute of Technical Physics (Poland)
Antoni Rogalski, Institute of Technical Physics (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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