Share Email Print

Proceedings Paper

GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors
Author(s): Antoni Rogalski; R. Panowicz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Investigations of the performance of GaAs/AlGaAs quantum well infrared photoconductors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. In comparative studies the HgCdTe photoconductors and photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors are considered. It is assumed that the performance of HgCdTe photodiodes is due to thermal generation governed by the auger mechanism in the base regions. Investigations of the fundamental physical limitations of HgCdTe photodiodes indicate better performance of this type of detector in comparison with QWIPs operated in the range 35 to 77 K. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe is characterized by high optical absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to extrinsic detectors, silicide Schottky barriers and QWIPs. However, the cooling requirements for QWIPs with cutoff wavelengths below 10 micrometer are less stringent in comparison with extrinsic detectors and Schottky barrier devices.

Paper Details

Date Published: 16 October 1995
PDF: 15 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224981
Show Author Affiliations
Antoni Rogalski, Military Univ. of Technology (Poland)
R. Panowicz, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

© SPIE. Terms of Use
Back to Top