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Proceedings Paper

Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs
Author(s): Lester J. Kozlowski; Jose M. Arias; William E. Tennant
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Paper Abstract

We compare several key infrared detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equal to 1017 photons/cm2-sec. The detector materials include photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, photoconductive (PC) GaAs/AlGaAs quantum well infrared photodetector (QWIP) and PV InGaAs/InP; the device sizes range from 64 multiplied by 64 to 1024 multiplied by 1024.

Paper Details

Date Published: 16 October 1995
PDF: 7 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224980
Show Author Affiliations
Lester J. Kozlowski, Rockwell Science Ctr. (United States)
Jose M. Arias, Rockwell Science Ctr. (United States)
William E. Tennant, Rockwell Science Ctr. (United States)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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