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Proceedings Paper

Scanning tunneling microscope on homo-epitaxial, boron-doped diamond films
Author(s): S. Szuba; W. J.P. van Enckevort; H. van Kempen
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Paper Abstract

In this paper the surfaces of {111}, {110}, and {100} homo-epitaxial layers of boron-doped diamond, grown by hot-filament assisted CVD, are examined by STM and optical microscopy. The STM results confirm the F- character of the {111} and {100} faces and the K-character of the {110} faces as was deduced from optical microscopy. However, only STM technique enables observation of individual nanometer scale steps, corrugations, and lattice imperfections arising during the diamond layers growth.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224978
Show Author Affiliations
S. Szuba, Poznan Univ. of Technology (Poland)
W. J.P. van Enckevort, Drukker International (Netherlands)
H. van Kempen, Univ. of Nijmegen (Netherlands)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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