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Proceedings Paper

Microstress in high-pressure temperature-treated Czochralski-grown silicon with oxygen concentration up to 1.2x 1018 cm-3
Author(s): Andrzej Misiuk
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Paper Abstract

Phenomena related to microstress at the SiOx/Si boundary in Czochralski grown silicon single crystals with the initial interstitial oxygen concentration up to 1.2 multiplied by 1018 cm-3, subjected to annealing at up to 1620 K under hydrostatic pressure up to 1.35 GPa, were investigated by deep-level transient spectroscopy (DLTS), selective etching, Fourier transform infrared spectroscopy (FTIR), and x ray methods. Depending on treatment conditions the enhanced microstress at the SiOx/Si boundary, creation of additional nucleation centers, and change of precipitate critical radius can promote oxygen precipitation (retard OP dissolution) also causing creation of additional defects. Qualitative explanation of some observed phenomena is proposed.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224977
Show Author Affiliations
Andrzej Misiuk, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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