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Proceedings Paper

Integrating III-V quantum dot lasers on silicon substrates for silicon photonics
Author(s): M. Liao; S. Chen; M. Tang; J. Wu; W. Li; K. Kennedy; I. Ross; A. Seeds; H. Liu
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Paper Abstract

The realization of efficient III-V lasers directly grown on Si substrates is highly desirable for large-scale and low-cost silicon based optoelectronic integrated circuits. However, it has been hindered by the high threading dislocation (TD) density generated at the interface between III-V compounds and Si substrates. Introducing dislocation filter layers (DFLs) to suppress the TD propagation into the active region becomes a key factor for realising lasers with advanced performance. In this paper, optimization of InGaAs/GaAs DFLs in III-V quantum dot (QD) lasers on Si is demonstrated. Based on these optimized DFLs and other strategies, we have achieved a high performance electrically pumped QD laser on a Si substrate with threshold current density of 62.5 A cm-2, over 105 mW output power, maximum operation temperature of 120 °C and over 100,158 h of extrapolated lifetime.

Paper Details

Date Published: 20 February 2017
PDF: 8 pages
Proc. SPIE 10108, Silicon Photonics XII, 101081A (20 February 2017); doi: 10.1117/12.2249761
Show Author Affiliations
M. Liao, Univ. College London (United Kingdom)
S. Chen, Univ. College London (United Kingdom)
M. Tang, Univ. College London (United Kingdom)
J. Wu, Univ. College London (United Kingdom)
W. Li, The Univ. of Sheffield (United Kingdom)
K. Kennedy, The Univ. of Sheffield (United Kingdom)
I. Ross, The Univ. of Sheffield (United Kingdom)
A. Seeds, Univ. College London (United Kingdom)
H. Liu, Univ. College London (United Kingdom)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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