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Proceedings Paper

Developments in floating zone silicon crystal growth
Author(s): W. Schroeder; H. Riemann; A. Luedge
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Paper Abstract

In this paper, the influence of the inductor design on the heat distribution in the growing floating zone silicon crystal is shown. Especially for the inductor profile and the slot width qualitative and quantitative results are given.

Paper Details

Date Published: 16 October 1995
PDF: 9 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224975
Show Author Affiliations
W. Schroeder, Institute of Crystal Growth (Germany)
H. Riemann, Institute of Crystal Growth (Germany)
A. Luedge, Institute of Crystal Growth (Germany)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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