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Proceedings Paper

Simulation of multiplying electron distribution in electron multiplier layer for EBAPS
Author(s): Xue Piao; Feng Shi; Jin Song; Ye Li; Qingduo Duanmu; Chunyang Liu; De Song
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Paper Abstract

The multiplying electron distribution within the electron multiplier layer for electron bombarded active pixel sensor (EBAPS) was simulated. The photoelectron scatting trajectories in electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. According to semiconductor theory, the influence factors (the incident electron energy, depth and beam diameter) how affecting the energy loss rate were studied. Therefore, the photoelectron scatting trajectories and multiplying electron distribution in electron multiplier layer can be simulated, which will provide theoretical basis to further simulate the charge collection efficiency of EBAPS.

Paper Details

Date Published: 7 November 2016
PDF: 5 pages
Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410W (7 November 2016); doi: 10.1117/12.2249736
Show Author Affiliations
Xue Piao, Changchun Univ. of Science and Technology (China)
Feng Shi, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Jin Song, Changchun Univ. of Science and Technology (China)
Ye Li, Changchun Univ. of Science and Technology (China)
Qingduo Duanmu, Changchun Univ. of Science and Technology (China)
Chunyang Liu, Changchun Univ. of Science and Technology (China)
De Song, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10141:
Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016
Yueguang Lv; Weimin Bao; Guangjun Zhang, Editor(s)

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