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Proceedings Paper

New absorption lines in SI-GaAs related to As vacancy
Author(s): B. Surma; S. Strzelecka; Malgorzata Mozdzonek; M. Gladysz
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Paper Abstract

Optical measurements of semi-insulating GaAs in spectral region 1400 - 500 cm-1 are presented. The new absorption lines X5 (1201.8 cm-1) and X4 (1317.5 cm-1) are observed. It has been found that they are related to electrically active defects and are electronic transitions in nature. The coupling of the defect responsible for these lines with the lattice is stronger than CC model predicts. Our results seems to suggest that the lines are related to VAs defect.

Paper Details

Date Published: 16 October 1995
PDF: 5 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224973
Show Author Affiliations
B. Surma, Institute of Electronic Materials Technology (Poland)
S. Strzelecka, Institute of Electronic Materials Technology (Poland)
Malgorzata Mozdzonek, Institute of Electronic Materials Technology (Poland)
M. Gladysz, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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