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Proceedings Paper

Influence of carbon doping on physical properties of SI GaAs
Author(s): Andrzej Hruban; S. Strzelecka; M. Gladysz; E. Jurkiewicz Wegner; W. Orlowski; A. Mirowska; M. Piersa; B. Surma
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Paper Abstract

Undoped and C-doped GaAs crystals, grown by the LP LEC and HP LEC techniques have been investigated. Carbon was incorporated into the melt during synthesis of monocrystallization in the range 6 multiplied by 1014 divided by 2 multiplied by 1016 cm-3. Controlled carbon doping allows us to obtain SI GaAs crystals with high resistivity rho greater than 107 (Omega) cm and high mobility mu greater than or equal to 5000 cm2/Vs.

Paper Details

Date Published: 16 October 1995
PDF: 4 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224972
Show Author Affiliations
Andrzej Hruban, Institute of Electronic Materials Technology (Poland)
S. Strzelecka, Institute of Electronic Materials Technology (Poland)
M. Gladysz, Institute of Electronic Materials Technology (Poland)
E. Jurkiewicz Wegner, Institute of Electronic Materials Technology (Poland)
W. Orlowski, Institute of Electronic Materials Technology (Poland)
A. Mirowska, Institute of Electronic Materials Technology (Poland)
M. Piersa, Institute of Electronic Materials Technology (Poland)
B. Surma, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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