Share Email Print
cover

Proceedings Paper

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration
Author(s): Marco Casale; Sebastien Kerdiles; Pierre Brianceau; Vincent Hugues; Houssein El Dirani; Corrado Sciancalepore
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing (~1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

Paper Details

Date Published: 16 February 2017
PDF: 7 pages
Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 1010608 (16 February 2017); doi: 10.1117/12.2249666
Show Author Affiliations
Marco Casale, Univ. Grenoble Alpes, CEA, LETI (France)
Sebastien Kerdiles, Univ. Grenoble Alpes, CEA, LETI (France)
Pierre Brianceau, Univ. Grenoble Alpes, CEA, LETI (France)
Vincent Hugues, Univ. Grenoble Alpes, CEA, LETI (France)
Houssein El Dirani, Univ. Grenoble Alpes, CEA, LETI (France)
Corrado Sciancalepore, Univ. Grenoble Alpes, CEA, LETI (France)


Published in SPIE Proceedings Vol. 10106:
Integrated Optics: Devices, Materials, and Technologies XXI
Sonia M. García-Blanco; Gualtiero Nunzi Conti, Editor(s)

© SPIE. Terms of Use
Back to Top