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Proceedings Paper

Temperature dependence of visible luminescence from porous silicon
Author(s): Waclaw Bala; Franciszek Firszt; Arleta Wieckowska; Elzbieta Nossarzewska-Orlowska; Andrzej Brzozowski
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Paper Abstract

This paper presents the results of an investigation of the temperature dependence of photoluminescence (PL) of electrochemically etched crystalline Si wafer. Luminescence spectra of porous silicon layers have been investigated as a function of temperature in the range between 35 K and 350 K. In general PL spectra consist of single broad emission bands with maxima positioned in the energy range from 1.75 eV to 1.95 eV at room temperature and 1.77 eV to 2.2 eV at T equals 40 K. A simple modeling of the PL band shape as a sum of Gaussian components indicates that four or more peaks exist within the response curve. Such analysis suggests that the luminescence in porous silicon arises from quantum confinement of the carriers in the silicon crystallites.

Paper Details

Date Published: 16 October 1995
PDF: 5 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224966
Show Author Affiliations
Waclaw Bala, N. Copernicus Univ. (Poland)
Franciszek Firszt, N. Copernicus Univ. (Poland)
Arleta Wieckowska, N. Copernicus Univ. (Poland)
Elzbieta Nossarzewska-Orlowska, Institute of Electronic Materials Technology (Poland)
Andrzej Brzozowski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications

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