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Proceedings Paper

Mechanism of generation of visible luminescence from porous silicon
Author(s): Piotr Bala; Waclaw Bala; Andrzej Kowalczyk; Zbigniew Lukasiak; Elzbieta Nossarzewska-Orlowska
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Paper Abstract

Photoluminescence (PL), photoluminescence excitation (PLE), and decay times measurements on anodically etched boron-doped Si are presented. To explain our results we assume a model in which the multi-barrier structure is formed by Si crystal (quantum well) surrounded by Si quantum wires, oriented perpendicular to the sample surface with diameters in the range of 2 to 12 nm (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.

Paper Details

Date Published: 16 October 1995
PDF: 4 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224965
Show Author Affiliations
Piotr Bala, N. Copernicus Univ. (Poland)
Waclaw Bala, N. Copernicus Univ. (Poland)
Andrzej Kowalczyk, N. Copernicus Univ. (Poland)
Zbigniew Lukasiak, N. Copernicus Univ. (Poland)
Elzbieta Nossarzewska-Orlowska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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