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Proceedings Paper

Luminescence properties of ZnxMg1-xSe layers
Author(s): Waclaw Bala; Franciszek Firszt; Janusz Dzik; Adam Gapinski; Grzegorz Glowacki
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Paper Abstract

This work deals with the study of luminescence properties of ZnxMg1-xSe layers prepared by different methods. ZnxMg1-xSe mixed crystal layers were obtained by: (a) thermal diffusion of Mg metal in the temperature range 1050 K - 1200 K into ZnSe single crystal grown by Bridgman method, and (b) epitaxial growth on (001) GaAs and (111) ZnTe substrates by MBE using elemental Zn, Se and Mg sources. The luminescence spectra of ZnxMg1-xSe layers grown on (001) GaAs and (111) ZnTe substrates are dominated by narrow blue and violet emission bands with maxima positioned at about 3.05 - 3.28 eV, 2.88 - 3.04 eV, and 2.81 - 2.705 eV.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224963
Show Author Affiliations
Waclaw Bala, N. Copernicus Univ. (Poland)
Franciszek Firszt, N. Copernicus Univ. (Poland)
Janusz Dzik, N. Copernicus Univ. (Poland)
Adam Gapinski, N. Copernicus Univ. (Poland)
Grzegorz Glowacki, N. Copernicus Univ. (Poland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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