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Proceedings Paper

Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor
Author(s): Kazimierz Jerzy Plucinski; S. Michalczuk
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Paper Abstract

A simple procedure has been developed by which the doping profile of the semiconductor can be obtained right up to the surface. Contrary to the existing methods no restriction has been made on the shape of the profile.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224955
Show Author Affiliations
Kazimierz Jerzy Plucinski, Military Univ. of Technology (Poland)
S. Michalczuk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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