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Proceedings Paper

Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)
Author(s): Xu Zhang; Charng-Gan Tu; Yu-Feng Yao; Chen-Yao Chao; Sheng-Hung Chen; Chun-Han Lin; Chia-Ying Su; Yean-Woei Kiang; Chih-Chung Yang

Paper Abstract

In a core-shell quantum-well (QW) nanorod (NR) structure, because of the non-uniform constituent atom supply for QW growth at different heights on a sidewall, the QW thickness and indium content vary with NR height. Multi-section NRs can be grown by controlling the supply duration of Ga source for decreasing the size of catalytic Ga droplet and hence tapering the NR cross-sectional size. The sidewall QWs of such a multi-section NR can emit light of a broad spectrum due to the larger variation ranges of QW thickness and indium content between sections of different cross-sectional sizes. In this paper, besides the growth processes of the aforementioned NR structures are reported, two models are built for simulating the sidewall QW growth and the tapering process of NR. Based on one of the models, the theories show the consistent results of increasing QW thickness and indium content in increasing NR height with the experimental observations. Based on another model, Ga adatoms diffuse on the slant facets from the Ga droplet on the NR top to deposit GaN on the slant facets for forming a gradient layer. In this situation, the angle of the slant facet increases from ~43 to ~62 degrees during the tapering process. The results are consistent with what observed in experiment. In this paper, besides NRs grown from patterned circular holes, the growth results of NRs from patterned elliptical holes are illustrated.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010412 (19 April 2017); doi: 10.1117/12.2249542
Show Author Affiliations
Xu Zhang, National Taiwan Univ. (Taiwan)
Charng-Gan Tu, National Taiwan Univ. (Taiwan)
Yu-Feng Yao, National Taiwan Univ. (Taiwan)
Chen-Yao Chao, National Taiwan Univ. (Taiwan)
Sheng-Hung Chen, National Taiwan Univ. (Taiwan)
Chun-Han Lin, National Taiwan Univ. (Taiwan)
Chia-Ying Su, National Taiwan Univ. (Taiwan)
Yean-Woei Kiang, National Taiwan Univ. (Taiwan)
Chih-Chung Yang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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