Share Email Print
cover

Proceedings Paper

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)
Author(s): Charng-Gan Tu; Hao-Tsung Chen; Sheng-Hung Chen; Chen-Yao Chao; Yean-Woei Kiang; Chih-Chung Yang
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

Paper Details

Date Published: 20 April 2017
PDF: 1 pages
Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240E (20 April 2017); doi: 10.1117/12.2249540
Show Author Affiliations
Charng-Gan Tu, National Taiwan Univ. (Taiwan)
Hao-Tsung Chen, National Taiwan Univ. (Taiwan)
Sheng-Hung Chen, National Taiwan Univ. (Taiwan)
Chen-Yao Chao, National Taiwan Univ. (Taiwan)
Yean-Woei Kiang, National Taiwan Univ. (Taiwan)
Chih-Chung Yang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 10124:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
Jong Kyu Kim; Michael R. Krames; Li-Wei Tu; Martin Strassburg, Editor(s)

© SPIE. Terms of Use
Back to Top