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Proceedings Paper

Crystal growth of undoped semi-insulating InP
Author(s): Andrzej Hruban; S. Strzelecka; E. Jurkiewicz Wegner; M. Gladysz; W. Orlowski; M. Piersa; A. Mirowska
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Paper Abstract

Nominally undoped and lightly Fe-doped semi-insulating InP can be prepared by thermal annealing under phosphorus vapor pressure. Semi-insulating undoped material obtained in this work has not indicated iron content. Thermal annealing process of InP:Fe with NFe <EQ 8 (DOT) 1016 cm-3 improves its electrical parameters. The material has been characterized by: Hall effect and conductivity measurements, resistivity and Fe concentration distribution, photoluminescence measurements.

Paper Details

Date Published: 16 October 1995
PDF: 5 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224934
Show Author Affiliations
Andrzej Hruban, Institute of Electronic Materials Technology (Poland)
S. Strzelecka, Institute of Electronic Materials Technology (Poland)
E. Jurkiewicz Wegner, Institute of Electronic Materials Technology (Poland)
M. Gladysz, Institute of Electronic Materials Technology (Poland)
W. Orlowski, Institute of Electronic Materials Technology (Poland)
M. Piersa, Institute of Electronic Materials Technology (Poland)
A. Mirowska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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