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Proceedings Paper

The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films
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Paper Abstract

In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K.

Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K – 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 – 800 nm using a He-Cd laser source with λ=325 nm.

The influence of annealing on the electrical and optical properties was explained. Current resonance phenomenon and reduction of photoluminescence spectra were observed.

Paper Details

Date Published: 28 September 2016
PDF: 8 pages
Proc. SPIE 10031, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016, 100310D (28 September 2016); doi: 10.1117/12.2249111
Show Author Affiliations
Karolina Czarnacka, Lublin Univ. of Technology (Poland)
F. F. Komarov, A.N. Sevchenko Institute of Applied Physics Problems (Belarus)


Published in SPIE Proceedings Vol. 10031:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016
Ryszard S. Romaniuk, Editor(s)

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