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Proceedings Paper

Thermal lithography characteristics of SbBi thin films
Author(s): Liang Li; Kui Zhang
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Paper Abstract

Laser thermal lithography technology based on the optothermal mode is a very promising fabrication approach in high density optical storage and semiconductor industry. SbBi thin film is a typical phase change material which has been deep going studied and widely used as the super-resolution mask layer. Phase transformation of the SbBi material from amorphous to crystalline state can be achieved by vacuum annealing or laser irradiating. In this work, SbBi thin films as a new thermal lithography material are investigated for the first time. The thermal lithography characteristics of SbBi thin films were studied by means of etching in the ammonium sulfide solution. Line-shaped structures were developed using our laser-induced crystallization apparatus, followed by etching in the ammonium sulfide solution. It is found that the etching rate of the amorphous state is greater than that of the crystalline state, which are 17.8 nm/min and 4 nm/min, respectively. The mechanism of the difference in etching rate between the two states is also discussed. These results indicate that SbBi thin film is a potential candidate for thermal lithography materials.

Paper Details

Date Published: 12 October 2016
PDF: 6 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981811 (12 October 2016); doi: 10.1117/12.2248356
Show Author Affiliations
Liang Li, Shanghai International Investment Consulting Corp., LTD (China)
Shanghai Institute of Optics and Fine Mechanics (China)
Kui Zhang, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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