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Recent improvement in nitride lasers
Author(s): Shingo Masui; Yoshitaka Nakatsu; Daiji Kasahara; Shin-ichi Nagahama
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Paper Abstract

We report our recent improvement of watt class blue and green GaN based LDs. These LDs were grown on c-face GaN substrates by metal organic chemical deposition. The laser chip was mounted on the heat sink by the junction down method in TO-ø9 mm package for the suppression of the thermal resistance. The optical output power of 455nm blue LDs was obtained above 4.7 W at injection current of 3A. The average lifetime was estimated to be over 30,000 hours at case temperature of 65 degree C under 3A. In green LDs, 1 watt class 532 nm green LDs as same wavelength as second harmonic generation (SHG) green laser was developed and the wall plug efficiency was 12.1 %. And the longer lasing wavelength was achieved to 537 nm.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041H (16 February 2017); doi: 10.1117/12.2247988
Show Author Affiliations
Shingo Masui, Nichia Corp. (Japan)
Yoshitaka Nakatsu, Nichia Corp. (Japan)
Daiji Kasahara, Nichia Corp. (Japan)
Shin-ichi Nagahama, Nichia Corp. (Japan)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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