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Proceedings Paper

830 nm InGaAs quantum well lasers with very low beam divergence
Author(s): Bocang Qiu; H. Martin Hu; Weimin Wang; James Ho; Wenbin Liu; Langxing Kuang; Taishan Wang; Shujuan Wu
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Paper Abstract

We report on our design and fabrication of 830 nm high power semiconductor lasers with extremely low beam divergence. Here we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimized epi structure which not only produces a beam divergence of less than 16°, but also has very good growth tolerance as well. Tested devices show the beam divergence is as small as 13°, yet they still retain very high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide.

Paper Details

Date Published: 9 November 2016
PDF: 8 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170B (9 November 2016); doi: 10.1117/12.2247924
Show Author Affiliations
Bocang Qiu, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
H. Martin Hu, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Weimin Wang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
James Ho, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Wenbin Liu, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Langxing Kuang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Taishan Wang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Shujuan Wu, Shenzhen Raybow Optoelectronics Co., Ltd. (China)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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