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Proceedings Paper

4W high performance 1470 nm InGaAsAs lasers
Author(s): Bocang Qiu; Weimin Wang; Wenbin Liu; Chuzhong Zhao; Langxing Kuang; Chunyu Miao; James Ho; H. Martin Hu
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Paper Abstract

We report on our design and fabrication of 1470 nm high power InGaAlAs quantum well lasers. It is found that the 2-mm-long-cavity devices with aperture size of 96 μm can reach maximum power of around 4.2 W. The threshold is around 500 mA, and slope efficiency is about 0.42 W/A. Apart from the excellent external quantum efficiency and thermal performance, devices also show reduced beam divergence which is about 30°. Accelerated life-time test has also been performed to determine the reliability performance. Thus far more than 9000 life-test-hour has been accumulated, and there is no detectable sign of the power degradation, indicating our devices are extremely reliable.

Paper Details

Date Published: 9 November 2016
PDF: 7 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100171C (9 November 2016); doi: 10.1117/12.2247923
Show Author Affiliations
Bocang Qiu, Tsinghua Univ. (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Weimin Wang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Wenbin Liu, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Chuzhong Zhao, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Langxing Kuang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Chunyu Miao, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
James Ho, Tsinghua Univ. (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
H. Martin Hu, Tsinghua Univ. (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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