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Proceedings Paper

A thick photoresist process for high aspect ratio MEMS applications
Author(s): Elias Laforge; Ricky Anthony; Paul McCloskey; Cian O'Mathúna
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Paper Abstract

In recent years, increased demand for high aspect ratio MEMS structures has driven the need for thick photoresist fabrication processes. In this work, the optimization of a thick photoresist process using a negative tone resist (THB-151N) is described. A thickness of 85 μm is obtained with an aspect ratio of 17:1 in a single coating process, with a 5 μm pitch. Conventional UV lithography is used and its parameters are optimized in order to achieve straight and near vertical sidewall profiles. The developed patterns are used as a mold to electroplate high aspect ratio copper windings of micro-inductors and micro-transformers. A high aspect ratio yields a copper track with a large cross sectional area resulting in a lower DC resistance. This enables a further reduction in the footprint area allowing for a more efficient manufacturing process and smaller device size. Unlike other high aspect ratio resist such as SU-8, this resist does not need a post exposure bake and can be readily removed after metal electroplating.

Paper Details

Date Published: 20 October 2016
PDF: 5 pages
Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 1003203 (20 October 2016); doi: 10.1117/12.2247899
Show Author Affiliations
Elias Laforge, Tyndall National Institute, Univ. College Cork (Ireland)
Ricky Anthony, Tyndall National Institute, Univ. College Cork (Ireland)
Paul McCloskey, Tyndall National Institute, Univ. College Cork (Ireland)
Cian O'Mathúna, Tyndall National Institute, Univ. College Cork (Ireland)


Published in SPIE Proceedings Vol. 10032:
32nd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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