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Proceedings Paper

TO packaged 650nm red semiconductor laser with transparent window
Author(s): Wei Xia; Zhen Zhu; Peixu Li; Jian Su; Xin Zhang; Xiangang Xu
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Paper Abstract

Highly uniform solid-phase Zn-diffusion technique was developed to fabricate transparent windows for 650 nm red laser diodes (LDs). The maximum output power was up to 120 mW, which is three times higher than that for LDs without window structure. The LDs showed excellent thermal characteristics and aging reliability with TO-can package. The characteristic temperature was estimated to be 85 K in the temperature range of 25~65 °C. The LDs showed stable operation of 10 mW at a high temperature of 75 °C. After aging test of 2000 h, the elevated operation current was less than 3%, compared to the initial value. The predicted life time was over 10000 h for 10 mW operation at 75 °C.

Paper Details

Date Published: 9 November 2016
PDF: 6 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170A (9 November 2016); doi: 10.1117/12.2247830
Show Author Affiliations
Wei Xia, Univ. of Jinan (China)
Shandong Huaguang Optoelectronics Co., Ltd. (China)
Zhen Zhu, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Peixu Li, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Jian Su, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Xin Zhang, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Xiangang Xu, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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