Share Email Print
cover

Proceedings Paper

Miniature, low-cost, 200 mW, infrared thermal emitter sealed by wafer-level bonding
Author(s): K. Schjølberg-Henriksen; J. Gjessing; K. A. H. Bakke; S. Hadzialic; D. T. Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Infrared (IR) thermal emitters are widely used in monitoring applications. For autonomous systems, miniaturized devices with low power consumption are needed. We have designed, fabricated and tested a novel device design, packaged on the wafer level by Al-Al thermo-compression bonding. 80 μm wide Aluminium frames on device and cap wafers were bonded in vacuum at 550°C, applying a force of 25 kN for 1 hour. The bond force translated to a bond pressure of 39 MPa. Subsequent device operation showed that the seals were hermetic, and that the emitters were encapsulated in an inert atmosphere.

The emitters were optimized for radiation at λ=3.5 μm. Emission spectra by Fourier Transform Infrared Spectroscopy showed high emissivity in the wavelength range 3 – 10 μm at 35 mA driving current and 5.7 V bias, i.e. 200 mW power consumption. The emitter temperature was around 700 °C. The rise and fall times of the emitters were below 8 and 3 ms, respectively. The low thermal mass indicates that pulsed operation at frequencies around 100 Hz could be realized with about 90 % modulation depth. The measured characteristics were in good agreement with COMSOL simulations. Thus, the presented devices have lower power consumption, an order of magnitude higher modulation frequency, and a production cost reduced by 40 – 60%1-4 compared to available, individually packaged devices. The patented device sealing provides through-silicon conductors and enables direct surface mounting of the components.

Paper Details

Date Published: 20 February 2017
PDF: 8 pages
Proc. SPIE 10108, Silicon Photonics XII, 101080P (20 February 2017); doi: 10.1117/12.2247815
Show Author Affiliations
K. Schjølberg-Henriksen, SINTEF (Norway)
J. Gjessing, SINTEF (Norway)
K. A. H. Bakke, SINTEF (Norway)
S. Hadzialic, SINTEF (Norway)
D. T. Wang, SINTEF (Norway)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

© SPIE. Terms of Use
Back to Top