Share Email Print
cover

Proceedings Paper

High performance 808 nm GaAsP/InGaP quantum well lasers
Author(s): H. Martin Hu; Bocang Qiu; Weimin Wang; Chunyu Miao; James Ho; Wenbin Liu; Chengpeng Li
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °.

Paper Details

Date Published: 9 November 2016
PDF: 8 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170M (9 November 2016); doi: 10.1117/12.2247781
Show Author Affiliations
H. Martin Hu, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Bocang Qiu, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Weimin Wang, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Chunyu Miao, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
James Ho, Research Institute of Tsinghua Univ. in Shenzhen (China)
Guangdong Provincial Key Lab. of Optomechatronics (China)
Wenbin Liu, Shenzhen Raybow Optoelectronics Co., Ltd. (China)
Chengpeng Li, Shenzhen Raybow Optoelectronics Co., Ltd. (China)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

© SPIE. Terms of Use
Back to Top