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Proceedings Paper

Studies on different passivation on InAs/GaSb type-II superlattice photodetectors
Author(s): Yurong Cui; Jianxin Chen; Zhicheng Xu; Jiajia Xu; Yi Zhou; Li He
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Paper Abstract

As a promising candidate for the next generation of infrared detection and imaging, more and more studies are focused on the type-II InAs/GaSb superlattice recently. In this paper, we studied different passivation techniques and the dielectric film-semiconductor interface properties for InAs/GaSb superlattice photodetectors. We found that with Si3N4 passivation, the R0A of the superlattice detector decreased from 2.8×105Ωcm2 to 12Ωcm2 at 80K after a process of rapid thermal annealing (RTA) at 250°C for 60s. Excessive surface charge of 6.15×1012cm-2 was measured from a gate-controlled structure. Meanwhile, the SiO2 passivated devices can sustain its electrical performance after the RTA process.

Paper Details

Date Published: 1 November 2016
PDF: 5 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573K (1 November 2016); doi: 10.1117/12.2247485
Show Author Affiliations
Yurong Cui, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Jiajia Xu, Shanghai Institute of Technical Physics (China)
Yi Zhou, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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