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Proceedings Paper

High-rate chemical vapor deposition of diamond films by dc arc discharge in hydrogen-methane mixture gas
Author(s): Xiang-Liu Jiang; Fang-Qing Zhang; Jiang-Qi Li; Bin Yang; Guang-Hua Chen
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Paper Abstract

Polycrystalline diamond films with high growth-rate have been synthesized by dc arc discharge plasma CVD in a mixture gas of CH4 (1) and 112 (99). The diamond films are deposited on water-cooled silicon and molybdenum substrates at gaseous pressure of about 200 Torr. The typical arc discharge is performed at 200V and 4A while the hydrogen flow rate is about 3000 3500 sccm. The crystallinity of diamond films prepared are characterized by Xray differaction (XRD) Raman scattering spectroscopy and scanning electron microscopy (SEM). It is verified by XRD and Raman measurements that the synthesized diamond films are identified as natural cubic diamond structure and contain substantially no graphite or amorphous carbon. SEM photographs show that the crystal grain size reachs 60 80 im with good crystal habit and the average growth rate of diamond films deposited during 4 hours is about 40 - 60 pm/h. As shown by SEM photographs the diamond grain size obviously depends on the local nucleation density. 1.

Paper Details

Date Published: 1 December 1990
PDF: 8 pages
Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22474
Show Author Affiliations
Xiang-Liu Jiang, Beijing Institute of Science and Technology (China)
Fang-Qing Zhang, Lanzhou Univ. (China)
Jiang-Qi Li, Lanzhou Univ. (China)
Bin Yang, Lanzhou Univ. (China)
Guang-Hua Chen, Lanzhou Univ. (China)


Published in SPIE Proceedings Vol. 1325:
Diamond Optics III
Albert Feldman; Sandor Holly, Editor(s)

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