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Proceedings Paper

Numerical simulation study on quantum efficiency characteristics of InP/InGaAs/InP infrared photocathode
Author(s): Junkai Xu; Xiangyan Xu; Jinshou Tian; Duan Luo; Dandan Hui
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Paper Abstract

The quantum efficiency characteristics of InP/In0.53Ga0.47As/InP photocathode which is one of the field-assisted negative electron affinity photocathodes with III-V compound semiconductor and works at transmission mode with a wide1 spectral response range from 1.0-1.7 μm were studied in this paper. Under certain field-assisted bias voltage, internal quantum efficiency at different wavelength versus structure parameters and doping concentration of the photocathode was simulated by the APSYS program. Results show that: First, internal quantum efficiency of the photocathode rises with the increasing of the field-assisted bias voltage. Second, the internal quantum efficiency gradually increases to a maximum at thickness=0.2um of P-InGaAs photo-absorbing layer and then reduces with the increasing of thickness. However, doping concentration of P-InGaAs photo-absorbing layer has little influence on it. Third, the internal quantum efficiency reduces with the increasing of thickness and doping concentration of P-InP photoelectron-emitting layer. The optimization results show that when the thickness of the photo-absorbing layer and the photoelectron-emitting layer are both 0.2 μm, and the doping concentration of the photo-absorbing layer and the photoelectron-emitting layer are about 1.5×1015 cm-3 and 1.0×1016 cm-3 respectively, under a certain field-assisted bias voltage, the line of the external quantum efficiency versus wavelength is ideal. Besides, the response time of photocathode can be reduced to less than 50 ps.

Paper Details

Date Published: 1 November 2016
PDF: 8 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573C (1 November 2016); doi: 10.1117/12.2247394
Show Author Affiliations
Junkai Xu, Xi'an Institute of Optics and Precision Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Key Lab. of Ultra-fast Photoelectric Diagnostics Technology (China)
Xiangyan Xu, Xi'an Institute of Optics and Precision Mechanics (China)
Key Lab. of Ultra-fast Photoelectric Diagnostics Technology (China)
Jinshou Tian, Xi'an Institute of Optics and Precision Mechanics (China)
Key Lab. of Ultra-fast Photoelectric Diagnostics Technology (China)
Duan Luo, Xi'an Institute of Optics and Precision Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Key Lab. of Ultra-fast Photoelectric Diagnostics Technology (China)
Dandan Hui, Xi'an Institute of Optics and Precision Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Key Lab. of Ultra-fast Photoelectric Diagnostics Technology (China)


Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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