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Proceedings Paper

High operating temperature InAlSb infrared detectors
Author(s): Mo Li; Gang Chen; Hao Li; Zhaofan Zhang; Pan Peng; Yanqiu Lv
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Paper Abstract

The recent progresses of our research in InxAl1-xSb infrared detector based on molecular beam epitaxy are presented. Al composition with 0-0.3 is used for adjusting energy gaps of InSb and a p-i-n structure is utilized to decrease dark current. InxAl1-xSb ternary alloys are grown by molecular beam epitaxy on InSb substrates, and the material quality is characterized using high resolution x-ray diffraction. In order to exploit this epitaxial material we have developed new mesa and passivation technology based on matured InSb fabrication process. The InAlSb diodes has a cut-off wavelength of around 4.8μm. The reverse bias dark current of InAlSb diodes have been measured. The dark current of the pin InAlSb diode is seen to smaller that of the bulk p+n InSb diodes by 4-5 times in 77K.

Paper Details

Date Published: 1 November 2016
PDF: 4 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573B (1 November 2016); doi: 10.1117/12.2247359
Show Author Affiliations
Mo Li, Luoyang Optoelectro Technology Development Ctr. (China)
Gang Chen, Luoyang Optoelectro Technology Development Ctr. (China)
Hao Li, Luoyang Optoelectro Technology Development Ctr. (China)
Zhaofan Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Pan Peng, Luoyang Optoelectro Technology Development Ctr. (China)
Yanqiu Lv, Luoyang Optoelectro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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