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Proceedings Paper

On-wafer high temperature characterization system
Author(s): L. Teodorescu; F. Drăghici; I. Rusu; G. Brezeanu
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Paper Abstract

In this work a on-wafer high temperature characterization system for wide bandgap semiconductor devices and circuits has been designed, implemented and tested. The proposed system can perform the wafer temperature adjustment in a large domain, from the room temperature up to 3000C with a resolution better than ±0.50C. In order to obtain both low-noise measurements and low EMI, the heating element of the wafer chuck is supplied in two ways: one is from a DC linear power supply connected to the mains electricity, another one is from a second DC unit powered by batteries. An original temperature control algorithm, different from classical PID, is used to modify the power applied to the chuck.

Paper Details

Date Published: 14 December 2016
PDF: 8 pages
Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 1001006 (14 December 2016); doi: 10.1117/12.2247062
Show Author Affiliations
L. Teodorescu, Univ. Politehnica of Bucharest (Romania)
Horia Hulubei National Institute for Research and Development in Physics and Nuclear Engineering (Romania)
F. Drăghici, Univ. Politehnica of Bucharest (Romania)
I. Rusu, Univ. Politehnica of Bucharest (Romania)
G. Brezeanu, Univ. Politehnica of Bucharest (Romania)


Published in SPIE Proceedings Vol. 10010:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII
Marian Vladescu; Cornel T. Panait; Razvan Tamas; George Caruntu; Ionica Cristea, Editor(s)

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