Share Email Print
cover

Proceedings Paper

Investigation of data retention under current bias for phase change memory
Author(s): Yao-Yao Lu; Dao-Lin Cai; Yi-Feng Chen; Yue-Qing Wang; Hong-Yang Wei; Ru-Ru Huo; Zhi-Tang Song
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

With Phase-change memory (PCM), information can be stored as different resistance states even when not powered. In order to accurately characterize the reliability of PCM devices, data retention has to be tested carefully. In this paper, a new test method is applied to measure the data retention of T-shaped PCM devices. This method makes it possible to accelerate crystallization in the amorphous area by using current bias. The new method works based on the field-induced crystallization theory, and could be able to gather fast and detailed information about high-resistance state’s failure process, and at the same time, it could avoid issues related to high temperature. Experimental data for T-shaped PCM devices based on Ge2Sb2Te5 are presented and analyzed. An exponential trend-line of failure time t versus reciprocal bias current 1/I shows only negligible deviation of the measured data points, enabling the extrapolation of the retention behavior for ten-year lifetime. A maximum disturb current value of 5.08 μA is extracted to guarantee the ten years data retention requirement for PCM applications.

Paper Details

Date Published: 12 October 2016
PDF: 6 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180W (12 October 2016); doi: 10.1117/12.2246987
Show Author Affiliations
Yao-Yao Lu, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Dao-Lin Cai, Shanghai Institute of Microsystem and Information Technology (China)
Yi-Feng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Yue-Qing Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Hong-Yang Wei, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Ru-Ru Huo, Shanghai Institute of Microsystem and Information Technology (China)
ShanghaiTech Univ. (China)
Zhi-Tang Song, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top