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Proceedings Paper

N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application
Author(s): Li Yuan; Yifeng Hu; Xiaoqin Zhu; Jianhao Zhang; Hua Zou; Jianzhong Xue; Long Zheng; Weihua Wu; Sannian Song; Zhitang Song
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Paper Abstract

The Sn15Sb85 alloy is characterized by its rapid phase transition. However, its poor thermal stability hinders its application as phase change memory material. After nitrogen doping, the crystallization temperature and 10-year data retention temperature of Sn15Sb85 thin films even reach 235‡C and 173°C, respectively. Both the crystallization activation energy and the amorphous resistance of the thin films increase as well. As a result, the material thermal stability is significant improved. The surface roughness of the films is evaluated by atomic force microscope (AFM). The phase change speed of the thin films, measured by the picosecond laser technique, remains fast.

Paper Details

Date Published: 12 October 2016
PDF: 7 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180V (12 October 2016); doi: 10.1117/12.2246985
Show Author Affiliations
Li Yuan, Jiangsu Univ. of Technology (China)
Yifeng Hu, Jiangsu Univ. of Technology (China)
Xiaoqin Zhu, Jiangsu Univ. of Technology (China)
Jianhao Zhang, Jiangsu Univ. of Technology (China)
Hua Zou, Jiangsu Univ. of Technology (China)
Jianzhong Xue, Jiangsu Univ. of Technology (China)
Long Zheng, Jiangsu Univ. of Technology (China)
Weihua Wu, Jiangsu Univ. of Technology (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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