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Proceedings Paper

Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications
Author(s): Tianqi Guo; Sannian Song; Le Li; Lanlan Shen; Bo Liu; Zhitang Song; Ming Qi; Songlin Feng
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Paper Abstract

The reliability and operation speed have long been two great obstacles in phase change memory technology. Thus (SiC)0.85-Sb3Te alloy was proposed to be a new-type phase change material due to its high crystallization temperature (199.7°C) and good data retention ability (118.9°C for 10-year archival life) in this work. The stress accompanying the phase transition in (SiC)0.85-Sb3Te is smaller than those in pure Sb3Te and the traditional material, Ge2Sb2Te5. This is attributed to the fine crystal grain size due to SiC doping, which contributes to the ultrafast reversible operation (5 ns) and good endurance (2.3 × 104 cycles) of (SiC)0.85-Sb3Te based phase change memory cells.

Paper Details

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180U (12 October 2016); doi: 10.1117/12.2246984
Show Author Affiliations
Tianqi Guo, Shanghai Institute of Microsystem and Information Technology (China)
ShanghaiTech Univ. (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Shanghai Institute of Microsystem and Information Technology (China)
Lanlan Shen, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Ming Qi, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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