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Proceedings Paper

Pockels effect and optical rectification induced by the built-in electric field in the space charge regions of surface layers of silicon crystals
Author(s): Qi Wang; Xiuhuan Liu; Lixin Hou; Zhanguo Chen
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Paper Abstract

In this paper, electric field induced Pockels effect and optical rectification were demonstrated in the space charge regions of surface layers of (001)- and (110)-cut silicon crystals. The Pockels signals were much larger than the Kerr signals. These effects were considerable that they should be taken into account when designing silicon devices. Dependence of the optical rectification on various depth of the silicon crystal was investigated which could be used as a simple and nondestructive method to detect distribution of electric field of silicon devices.

Paper Details

Date Published: 19 October 2016
PDF: 7 pages
Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015210 (19 October 2016); doi: 10.1117/12.2246929
Show Author Affiliations
Qi Wang, Jilin Univ. (China)
Xiuhuan Liu, Jilin Univ. (China)
Lixin Hou, Jilin Agricultural Univ. (China)
Zhanguo Chen, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 10152:
High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration
Lijun Wang; Zhiping Zhou, Editor(s)

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