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Proceedings Paper

Simulation of InGaAs/InAlAs avalanche photodetectors
Author(s): Zhengyu Zhang; Jun Chen; Min Zhu
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Paper Abstract

In this paper, we report 2D simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD. We found that with the change of the thickness and doping concentration of multiplication layer, the change of the punchthrough voltage, and the breakdown voltage can be obviously observed.

Paper Details

Date Published: 1 November 2016
PDF: 6 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101572A (1 November 2016); doi: 10.1117/12.2246821
Show Author Affiliations
Zhengyu Zhang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)
Min Zhu, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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