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Proceedings Paper

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors
Author(s): Jun Wang; Jin Guo; Feng Xie; Guosheng Wang; Haoran Wu; Man Song; Yuanyuan Yi
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Paper Abstract

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

Paper Details

Date Published: 19 October 2016
PDF: 7 pages
Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540N (19 October 2016); doi: 10.1117/12.2246472
Show Author Affiliations
Jun Wang, China Electronics Technology Group Corp. (China)
Jin Guo, China Electronics Technology Group Corp. (China)
Feng Xie, China Electronics Technology Group Corp. (China)
Guosheng Wang, China Electronics Technology Group Corp. (China)
Haoran Wu, China Electronics Technology Group Corp. (China)
Man Song, China Electronics Technology Group Corp. (China)
Yuanyuan Yi, China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 10154:
Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation
Min Xu; Ji Yang, Editor(s)

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