Share Email Print
cover

Proceedings Paper

980 nm tapered lasers with photonic crystal structure for low vertical divergence
Author(s): Xiaolong Ma; Hongwei Qu; Pengchao Zhao; Yun Liu; Wanhua Zheng
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High power tapered lasers with nearly diffraction-limited beam quality have attracted much attention in numerous applications such as nonlinear frequency conversion, optical pumping of solid-state and fiber lasers, medical treatment and others. However, the large vertical divergence of conventional tapered lasers is a disadvantage, which makes beam shaping difficult and expensive in applications. Diode lasers with photonic crystal structure can achieve a large mode size and a narrow vertical divergence. In this paper, we present tapered lasers with photonic crystal structure emitting at 980 nm. The epitaxial layer is grown using metal organic chemical vapor deposition. The device has a total cavity length of 2 mm, which consists of a 400-um long ridge-waveguide section and a 1600-um long tapered section. The taper angle is 4°. An output power of 3.3 W is achieved with a peak conversion efficiency of 35% in pulsed mode. The threshold current is 240 mA and the slope efficiency is 0.78 W/A. In continuous wave mode, the output power is 2.87 W, which is limited by a suddenly failure resulting from catastrophic optical mirror damage. The far field divergences with full width at half maximum are 12.3° in the vertical direction and 2.9° in the lateral direction at 0.5 A. At high injection level the vertical divergence doesn’t exceed 16°. Beam quality factor M2 is measured based on second moment definition in CW mode. High beam quality is demonstrated by M2 value of less than 2 in both vertical and lateral directions.

Paper Details

Date Published: 31 October 2016
PDF: 8 pages
Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 1001907 (31 October 2016); doi: 10.1117/12.2246353
Show Author Affiliations
Xiaolong Ma, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hongwei Qu, Institute of Semiconductors (China)
Pengchao Zhao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yun Liu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10019:
Optoelectronic Devices and Integration VI
Xuping Zhang; Baojun Li; Changyuan Yu, Editor(s)

© SPIE. Terms of Use
Back to Top