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Proceedings Paper

High efficiency single transverse mode photonic band crystal lasers with low vertical divergence
Author(s): Shaoyu Zhao; Hongwei Qu; Yun Liu; Lunhua Li; Yang Chen; Xuyan Zhou; Yuzhe Lin; Anjin Liu; Aiyi Qi; Wanhua Zheng
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Paper Abstract

High efficiency 980 nm longitudinal photonic band crystal (PBC) edge emitting laser diodes are designed and fabricated. The calculated results show that eight periods of Al0.1Ga0.9As and Al0.25Ga0.75As layer pairs can reduce the vertical far field divergence to 10.6° full width at half maximum (FWHM). The broad area (BA) lasers show a very high internal quantum efficiency ηi of 98% and low internal loss αi of 1.92 cm-1. Ridge waveguide (RW) lasers with 3 mm cavity length and 5um strip width provide 430 mW stable single transverse mode output at 500 mA injection current with power conversion efficiency (PCE) of 47% under continuous wave (CW) mode. A maximum PCE of 50% is obtained at the 300 mA injection current. A very low vertical far field divergence of 9.4° is obtained at 100 mA injection. At 500 mA injection, the vertical far field divergence increases to 11°, the beam quality factors M2 values are 1.707 in vertical direction and 1.769 in lateral direction.

Paper Details

Date Published: 31 October 2016
PDF: 8 pages
Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100190A (31 October 2016); doi: 10.1117/12.2246318
Show Author Affiliations
Shaoyu Zhao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hongwei Qu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yun Liu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Lunhua Li, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yang Chen, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Xuyan Zhou, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yuzhe Lin, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Anjin Liu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Aiyi Qi, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Wanhua Zheng, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10019:
Optoelectronic Devices and Integration VI
Xuping Zhang; Baojun Li; Changyuan Yu, Editor(s)

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