Share Email Print
cover

Proceedings Paper

Formation of recessed hole by NF3/O2 etching for phase change memory
Author(s): Zhen Xu; Bo Liu; Dan Gao; Heng Wang; Yangyang Xia; Zhitang Song; Lei Wang; Yipeng Zhan; Songlin Feng
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this work, we discuss about the formation of recessed hole in the manufacturing process of phase change memory (PCM). Three recessed holes with different slope angle and depth were obtained by changing the NF3/O2 gas mixing ratio. The recessed holes upon bottom electrode contact (BEC) were achieved by etch back process after the formation of BEC. The etching process takes advantage of the etch rate of TiN which is faster than that of SiN. With increasing content of O2 gas, the decrease in the etch rate of SiN was larger than that of TiN, and this increases the selectivity of TiN to SiN. Oxidation layer can be found upon the SiN layer in the energy dispersive X-ray (EDX) elemental mapping profile after the recessed etching step. It is the existence of oxidation layer that suppressed the etching of SiN.

Paper Details

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180O (12 October 2016); doi: 10.1117/12.2246305
Show Author Affiliations
Zhen Xu, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Dan Gao, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Heng Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Yangyang Xia, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Lei Wang, Semiconductor Manufacturing International Corp. (China)
Yipeng Zhan, Semiconductor Manufacturing International Corp. (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top