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Proceedings Paper

Subbandgap-excited photoconductivity in CVD diamond films
Author(s): Charles P. Beetz; B. A. Lincoln; David R. Winn
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Paper Abstract

The results of room-temperature photoconductivity measurements on free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture and ranged in thickness from 40 to 100 pm. The observed photocurrents in unintentionally doped films increased monotonically with increasing excitation energy. The films are found to exhibit photocurrent excitation similar to that observed for bulk diamond. In films doped with either N or Li the photocurrent exhibited broad structure superposed on the monotonic background. The photocurrent was found to depend on the chopping frequency of the excitation light decreasing with increasing chopper frequency indicative of trapping center dominated recombination dynamics. Schottky barrier heights were determined from the photoresponse for Au on CVD diamond film and on (100) oriented single crystalline type ila natural diamond. The measured barrier heights were 2. 02 and 2. 24 eV respectively in good agreement with previously measured values. A second barrier height was obtained from a threshold for internal photoemission at lower energies P4. 35 eV. We were able to observe for the first time an optical enhancement of 20X in the photocurrent using an optical biasing technique. 1.

Paper Details

Date Published: 1 December 1990
PDF: 13 pages
Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22463
Show Author Affiliations
Charles P. Beetz, Advanced Technology Materials, Inc. (United States)
B. A. Lincoln, Advanced Technology Materials, Inc. (United States)
David R. Winn, Fairfield Univ. (United States)


Published in SPIE Proceedings Vol. 1325:
Diamond Optics III
Albert Feldman; Sandor Holly, Editor(s)

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