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Proceedings Paper

Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition
Author(s): Sannian Song; Lanlan Shen; Zhitang Song; Dongning Yao; Tianqi Guo; Le Li; Bo Liu; Liangcai Wu; Yan Cheng; Yuqiang Ding; Songlin Feng
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Paper Abstract

Phase change random access memory (PCM) appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density PCM depends heavily on the thin film growth technique for the phase changing chalcogenide material. In this study, TiSb2Te4 (TST) thin films were deposited by thermal atomic layer deposition (ALD) method using TiCl4, SbCl3, (Et3Si)2Te as precursors. The threshold voltage for the cell based on thermal ALD-deposited TST is about 2.0 V, which is much lower than that (3.5 V) of the device based on PVD-deposited Ge2Sb2Te5 (GST) with the identical cell architecture. Tests of TST-based PCM cells have demonstrated a fast switching rate of ~100 ns. Furthermore, because of the lower melting point and thermal conductivities of TST materials, TST-based PCM cells exhibit 19% reduction of pulse voltages for Reset operation compared with GST-based PCM cells. These results show that thermal ALD is an attractive method for the preparation of phase change materials.

Paper Details

Date Published: 12 October 2016
PDF: 6 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180N (12 October 2016); doi: 10.1117/12.2246211
Show Author Affiliations
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Lanlan Shen, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Dongning Yao, Shanghai Institute of Microsystem and Information Technology (China)
Tianqi Guo, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Yuqiang Ding, Jiangnan Univ. (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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