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Proceedings Paper

Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs
Author(s): A. Mereuta; A. Caliman; A. Sirbu; V. Iakovlev; D. Ellafi; A. Rudra; P. Wolf; D. Bimberg; E. Kapon
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Paper Abstract

The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.

Paper Details

Date Published: 9 November 2016
PDF: 9 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 1001702 (9 November 2016); doi: 10.1117/12.2246208
Show Author Affiliations
A. Mereuta, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Caliman, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Sirbu, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
V. Iakovlev, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
D. Ellafi, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Rudra, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
P. Wolf, Technische Univ. Berlin (Germany)
D. Bimberg, Technische Univ. Berlin (Germany)
King Abdulaziz Univ. (Saudi Arabia)
E. Kapon, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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