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Proceedings Paper

Fabrication and performance of In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 multiple-quantum-well lasers
Author(s): Jia Chen; Qi Wang; Hao Liu; Zhiming Li; Xiaomin Ren
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Paper Abstract

An In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region’s optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells (MQWs) laser at 1.3 μm wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.

Paper Details

Date Published: 9 November 2016
PDF: 5 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170L (9 November 2016); doi: 10.1117/12.2245987
Show Author Affiliations
Jia Chen, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Hao Liu, Beijing Univ. of Posts and Telecommunications (China)
Zhiming Li, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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