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Proceedings Paper

GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations
Author(s): Genquan Han; Qingfang Zhang; Yan Liu; Chunfu Zhang; Yue Hao
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Paper Abstract

In this work, a fully strained GeSn photodetector with Sn atom percent of 8% is fabricated on Ge buffer on Si(001) substrate. The wavelength λ of light signals with obvious optical response for Ge0.92Sn0.08 photodetector is extended to 2 μm. The impacts of compressive strain introduced during the epitaxial growth of GeSn on Ge/Si are studied by simulation. Besides, the tensile strain engineering of GeSn photonic devices is also investigated. Lattice-matched GeSn/SiGeSn double heterostructure light emitting diodes (LEDs) with Si3N4 tensile liner stressor are designed to promote the further mid-infrared applications of GeSn photonic devices. With the releasing of the residual stress in Si3N4 liner, a large biaxial tensile strain is induced in GeSn active layer. Under biaxial tensile strain, the spontaneous emission rate rsp and internal quantum efficiency ηIQE for GeSn/SiGeSn LED are significantly improved.

Paper Details

Date Published: 4 November 2016
PDF: 8 pages
Proc. SPIE 10026, Real-time Photonic Measurements, Data Management, and Processing II, 100260T (4 November 2016); doi: 10.1117/12.2245980
Show Author Affiliations
Genquan Han, Xidian Univ. (China)
Qingfang Zhang, Chongqing Univ. (China)
Yan Liu, Xidian Univ. (China)
Chunfu Zhang, Xidian Univ. (China)
Yue Hao, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 10026:
Real-time Photonic Measurements, Data Management, and Processing II
Ming Li; Bahram Jalali; Keisuke Goda; Kevin K. Tsia, Editor(s)

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